Optical Recrystallization of Nanocrystalline Silicon Ribbons

Partitioning Effects in Recrystallization of Silicon from Silicon-metal Solutions

The objective of this work is to investigate various silicon-metal eutectic systems that selectively retain detrimental impurities, such as Ni, Co, Fe, Cr, in the melt so that silicon may be purified. We studied possible interactions in the melt and in the silicon crystal between impurity elements and solvent metals that lead to reduced or enhanced impurity partition relative to the respective ...

Recrystallization of silicon by pulsed lasers

2014 Calculation of the evolution of temperature during pulsed laser annealing has been performed. The results are presented in directly useful figures for the two kinds of laser generally used (YAG, Ruby). The results are compared to various experimental measurements performed by RBS. If the crystallographic quality is quite good, TSC and DLTS measurements have shown that electrically active d...

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Photoluminescence (PL) properties of alternating hydrogenated nanocrystalline silicon/amorphous silicon multilayers were investigated at room temperature and low temperature (77 K). The room-temperature PL spectra clearly show two peaks at about 1.54 and 1.7 eV. The 1.7 eV peak has no crystallite size dependence of the peak energy. The low-temperature PL spectra can be decomposed into three ban...

Raman scattering of alternating nanocrystalline silicon/amorphous silicon multilayers

Nanocrystallite size distribution and structural properties in alternating hydrogenated nanocrystalline silicon/amorphous silicon multilayers were investigated by means of Raman scattering. The obtained Raman spectra show a broad peak at ;480 cm from amorphous Si and some small peaks superposed on the broad peak. According to the positions of the crystallite peak, the mean crystallite size and ...

Simulation of Plasticity in Nanocrystalline Silicon